MSB120N08G mosfet equivalent, 80v n-channel mosfet.
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
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G.
LEAD FREE
Pb
RoHS
Features
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedne.
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